Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate: Fid-Bau Portal

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

Kojima, K. / Masumoto, K. / Ito, S. / Nagata, A. / Okumura, H.

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Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

Kojima, K. / Masumoto, K. / Ito, S. / Nagata, A. / Okumura, H.

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

Kojima, K. / Masumoto, K. / Ito, S. / Nagata, A. / Okumura, H.

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Document information

Title:

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

Contributors:

Kojima, K. (author) / Masumoto, K. (author) / Ito, S. (author) / Nagata, A. (author) / Okumura, H. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 125-130

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique

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