Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates: Fid-Bau Portal

Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates

Portail, M. / Chassagne, T. / Roy, S. / Moisson, C. / Zielinski, M.

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Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates

Portail, M. / Chassagne, T. / Roy, S. / Moisson, C. / Zielinski, M.

Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates

Portail, M. / Chassagne, T. / Roy, S. / Moisson, C. / Zielinski, M.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates

Contributors:

Portail, M. (author) / Chassagne, T. (author) / Roy, S. (author) / Moisson, C. (author) / Zielinski, M. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R.

Published in:

Silicon Carbide and Related Materials 2009 ; 155-158

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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