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Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
Senzaki, J. (author) / Suzuki, T. (author) / Shimozato, A. (author) / Fukuda, K. (author) / Arai, K. (author) / Okumura, H. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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