Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices: Fid-Bau Portal

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Yu, L.C. / Cheung, K.P. / Dunne, G. / Matocha, K. / Suehle, J.S. / Sheng, K.

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Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Yu, L.C. / Cheung, K.P. / Dunne, G. / Matocha, K. / Suehle, J.S. / Sheng, K.

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Yu, L.C. / Cheung, K.P. / Dunne, G. / Matocha, K. / Suehle, J.S. / Sheng, K.

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Title:

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Contributors:

Yu, L.C. (author) / Cheung, K.P. (author) / Dunne, G. (author) / Matocha, K. (author) / Suehle, J.S. (author) / Sheng, K. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.

Published in:

Silicon Carbide and Related Materials 2009 ; 805-808

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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