Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices: Fid-Bau Portal

Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

Uppal, S. / Kanoun, M. / Varzgar, J. B. / Chattopadhyay, S. / Olsen, S. / O'Neill, A.

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Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

Uppal, S. / Kanoun, M. / Varzgar, J. B. / Chattopadhyay, S. / Olsen, S. / O'Neill, A.

Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

Uppal, S. / Kanoun, M. / Varzgar, J. B. / Chattopadhyay, S. / Olsen, S. / O'Neill, A.

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Title:

Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

Contributors:

Uppal, S. (author) / Kanoun, M. (author) / Varzgar, J. B. (author) / Chattopadhyay, S. (author) / Olsen, S. (author) / O'Neill, A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 207-209

Publication date:

2006-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Lee, S. G. / Kim, Y. P. / Lee, H. L. et al. | British Library Online Contents | 2005

Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Varzgar, J. B. / Kanoun, M. / Uppal, S. et al. | British Library Online Contents | 2006

Selective epitaxial growth of strained SiGe/Si for optoelectronic devices

Vescan, L. / Stoica, T. / Goryll, M. et al. | British Library Online Contents | 1998

Numerical simulation of strained Si/SiGe devices: the hierarchical approach

Meinerzhagen, B. / Jungemann, C. / Neinhus, B. et al. | British Library Online Contents | 2004

Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices

Olsen, S. H. / O'Neill, A. G. / Norris, D. J. et al. | British Library Online Contents | 2004