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Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
Okamoto, M. (author) / Iijima, M. (author) / Yatsuo, T. (author) / Fukuda, K. (author) / Okumura, H. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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