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Nanotechnology copper interconnect processes integrations for high aspect ratio without middle etching stop layer
Nanotechnology copper interconnect processes integrations for high aspect ratio without middle etching stop layer
Nanotechnology copper interconnect processes integrations for high aspect ratio without middle etching stop layer
Weng, C. J. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 13 ; 56-63
2010-01-01
8 pages
Article (Journal)
English
DDC:
621.38152
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