Electromigration Behavior of through-Si-via (TSV) Interconnect for 3-D Flip Chip Packaging: Fid-Bau Portal

Electromigration Behavior of through-Si-via (TSV) Interconnect for 3-D Flip Chip Packaging

Ha, S.-S. / Yang, J.-M. / Jung, S.-B.

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Electromigration Behavior of through-Si-via (TSV) Interconnect for 3-D Flip Chip Packaging

Ha, S.-S. / Yang, J.-M. / Jung, S.-B.

Electromigration Behavior of through-Si-via (TSV) Interconnect for 3-D Flip Chip Packaging

Ha, S.-S. / Yang, J.-M. / Jung, S.-B.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Electromigration Behavior of through-Si-via (TSV) Interconnect for 3-D Flip Chip Packaging

Contributors:

Ha, S.-S. (author) / Yang, J.-M. (author) / Jung, S.-B. (author)

Published in:

MATERIALS TRANSACTIONS ; 51 ; 1020-1027

Publication date:

2010-01-01

Size:

8 pages

ISSN:

1345-9678

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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