A platform for research: civil engineering, architecture and urbanism
On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process
On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process
On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process
Pincik, E. (author) / Kobayashi, H. (author) / Rusnak, J. (author) / Kim, W. B. (author) / Brunner, R. (author) / Malinovsky, L. (author) / Matsumoto, T. (author) / Imamura, K. (author) / Jergel, M. (author) / Takahashi, M. (author)
APPLIED SURFACE SCIENCE ; 256 ; 5757-5764
2010-01-01
8 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2007
|British Library Online Contents | 2009
|An advantage of MOS structures with ultra thin oxide during irradiation
British Library Online Contents | 2003
|Photoluminescence of very thin oxide/a-Si:H structures passivated in HCN solutions
British Library Online Contents | 2008
|Ultra thin gate oxide reliability enhanced by carbon contamination free process
British Library Online Contents | 1997
|