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    Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature

    New search for: Wu, A.M.
    New search for: Yue, H.Y.
    New search for: Zhang, X.Y.
    New search for: Qin, F.W.
    New search for: Li, T.J.
    New search for: Jiang, X.
    New search for: Nie, J.-F.
    New search for: Morton, A.

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    Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature

    New search for: Wu, A.M.
    New search for: Yue, H.Y.
    New search for: Zhang, X.Y.
    New search for: Qin, F.W.
    New search for: Li, T.J.
    New search for: Jiang, X.
    New search for: Nie, J.-F.
    New search for: Morton, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature

    New search for: Wu, A.M.
    New search for: Yue, H.Y.
    New search for: Zhang, X.Y.
    New search for: Qin, F.W.
    New search for: Li, T.J.
    New search for: Jiang, X.
    New search for: Nie, J.-F.
    New search for: Morton, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature

    Contributors:

    Wu, A.M. (author) / Yue, H.Y. (author) / Zhang, X.Y. (author) / Qin, F.W. (author) / Li, T.J. (author) / Jiang, X. (author) / Nie, J.-F. / Morton, A.

    Published in:

    PRICM7 PART 2 ; 1712-1715

    MATERIALS SCIENCE FORUM ; 654/656

    Publication date:

    2010-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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