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Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature
Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature
Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature
Wu, A.M. (Autor:in) / Yue, H.Y. (Autor:in) / Zhang, X.Y. (Autor:in) / Qin, F.W. (Autor:in) / Li, T.J. (Autor:in) / Jiang, X. (Autor:in) / Nie, J.-F. / Morton, A.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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