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    Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method

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    New search for: Lee, H.
    New search for: Kanashima, T.
    New search for: Okuyama, M.

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    Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method

    New search for: Lee, D.
    New search for: Lee, H.
    New search for: Kanashima, T.
    New search for: Okuyama, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method

    New search for: Lee, D.
    New search for: Lee, H.
    New search for: Kanashima, T.
    New search for: Okuyama, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method

    Contributors:

    Lee, D. (author) / Lee, H. (author) / Kanashima, T. (author) / Okuyama, M. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 257 ; 917-920

    Publication date:

    2010-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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