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Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO~2 Gate Dielectric
Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO~2 Gate Dielectric
Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO~2 Gate Dielectric
Chandra, S.V.J. (author) / Jeong, M.-I. (author) / Park, Y.-C. (author) / Yoon, J.-W. (author) / Choi, C.-J. (author)
MATERIALS TRANSACTIONS ; 52 ; 118-123
2011-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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