Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO~2 Gate Dielectric
Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO~2 Gate Dielectric
Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO~2 Gate Dielectric
Chandra, S.V.J. (Autor:in) / Jeong, M.-I. (Autor:in) / Park, Y.-C. (Autor:in) / Yoon, J.-W. (Autor:in) / Choi, C.-J. (Autor:in)
MATERIALS TRANSACTIONS ; 52 ; 118-123
01.01.2011
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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