Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate: Fid-Bau Portal

Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Kurniawan, T. / Wong, Y. H. / Cheong, K. Y. / Moon, J. H. / Bahng, W. / Razak, K. A. / Lockman, Z. / Kim, H. J. / Kim, N.-K.

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Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Kurniawan, T. / Wong, Y. H. / Cheong, K. Y. / Moon, J. H. / Bahng, W. / Razak, K. A. / Lockman, Z. / Kim, H. J. / Kim, N.-K.

Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Kurniawan, T. / Wong, Y. H. / Cheong, K. Y. / Moon, J. H. / Bahng, W. / Razak, K. A. / Lockman, Z. / Kim, H. J. / Kim, N.-K.

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Document information

Title:

Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Contributors:

Kurniawan, T. (author) / Wong, Y. H. (author) / Cheong, K. Y. (author) / Moon, J. H. (author) / Bahng, W. (author) / Razak, K. A. (author) / Lockman, Z. (author) / Kim, H. J. (author) / Kim, N.-K. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 14 ; 13-17

Publication date:

2011-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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