Investigation of Surface and Interface Morphology of Thermally Grown SiO~2 Dielectrics on 4H-SiC(0001) Substrates: Fid-Bau Portal

Investigation of Surface and Interface Morphology of Thermally Grown SiO~2 Dielectrics on 4H-SiC(0001) Substrates

Hosoi, T. / Konzono, K. / Uenishi, Y. / Mitani, S. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H.

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Investigation of Surface and Interface Morphology of Thermally Grown SiO~2 Dielectrics on 4H-SiC(0001) Substrates

Hosoi, T. / Konzono, K. / Uenishi, Y. / Mitani, S. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H.

Investigation of Surface and Interface Morphology of Thermally Grown SiO~2 Dielectrics on 4H-SiC(0001) Substrates

Hosoi, T. / Konzono, K. / Uenishi, Y. / Mitani, S. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H.

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Title:

Investigation of Surface and Interface Morphology of Thermally Grown SiO~2 Dielectrics on 4H-SiC(0001) Substrates

Contributors:

Hosoi, T. (author) / Konzono, K. (author) / Uenishi, Y. (author) / Mitani, S. (author) / Nakano, Y. (author) / Nakamura, T. (author) / Shimura, T. (author) / Watanabe, H. (author) / Monakhov, E.V. / Hornos, T.

Published in:

Silicon Carbide and Related Materials 2010 ; 342-345

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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