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Dielectric Properties of Thermally Grown SiO~2 on 4H-SiC(0001) Substrates
Dielectric Properties of Thermally Grown SiO~2 on 4H-SiC(0001) Substrates
Dielectric Properties of Thermally Grown SiO~2 on 4H-SiC(0001) Substrates
Hosoi, T. (author) / Uenishi, Y. (author) / Mitani, S. (author) / Nakano, Y. (author) / Nakamura, T. (author) / Shimura, T. (author) / Watanabe, H. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A.
2013-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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