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Evolution of SiGe nanoclusters and micro defects in the Si1-xGex layer fabricated by two-step ion implantation and subsequent thermal annealing
Evolution of SiGe nanoclusters and micro defects in the Si1-xGex layer fabricated by two-step ion implantation and subsequent thermal annealing
Evolution of SiGe nanoclusters and micro defects in the Si1-xGex layer fabricated by two-step ion implantation and subsequent thermal annealing
APPLIED SURFACE SCIENCE ; 257 ; 9260-9263
2011-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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