LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers: Fid-Bau Portal

LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K.

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LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K.

LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K.

Access

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Order at Subito €

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Document information

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Document information

Title:

LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

Contributors:

Tsuchida, H. (author) / Kamata, I. (author) / Jikimoto, T. (author) / Izumi, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 145-148

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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