A platform for research: civil engineering, architecture and urbanism
In-Grown Stacking Faults in SiC-CVD using Dichlorosilane and Propane as Precursors
In-Grown Stacking Faults in SiC-CVD using Dichlorosilane and Propane as Precursors
In-Grown Stacking Faults in SiC-CVD using Dichlorosilane and Propane as Precursors
Song, H.Z. (author) / Omar, S.U. (author) / Rana, T. (author) / Chandrashekhar, M.V.S. (author) / Sudarshan, T.S. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 121-124
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane
British Library Online Contents | 2013
|Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
British Library Online Contents | 2010
|In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
British Library Online Contents | 2010
|Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
British Library Online Contents | 2005
|Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
British Library Online Contents | 2010
|