Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
In-Grown Stacking Faults in SiC-CVD using Dichlorosilane and Propane as Precursors
In-Grown Stacking Faults in SiC-CVD using Dichlorosilane and Propane as Precursors
In-Grown Stacking Faults in SiC-CVD using Dichlorosilane and Propane as Precursors
Song, H.Z. (Autor:in) / Omar, S.U. (Autor:in) / Rana, T. (Autor:in) / Chandrashekhar, M.V.S. (Autor:in) / Sudarshan, T.S. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 121-124
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane
| British Library Online Contents | 2013
Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
| British Library Online Contents | 2010
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
| British Library Online Contents | 2010
Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
| British Library Online Contents | 2005
Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
| British Library Online Contents | 2010