1200 V, 3.3 m Omega SiC Bipolar Junction Transistor Power Modules: Fid-Bau Portal

1200 V, 3.3 m Omega SiC Bipolar Junction Transistor Power Modules

Domeij, M. / Konstantinov, A. / Buono, B. / Bast, M. / Eisele, R. / Wang, L. / Magnusson, A.

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1200 V, 3.3 m Omega SiC Bipolar Junction Transistor Power Modules

Domeij, M. / Konstantinov, A. / Buono, B. / Bast, M. / Eisele, R. / Wang, L. / Magnusson, A.

1200 V, 3.3 m Omega SiC Bipolar Junction Transistor Power Modules

Domeij, M. / Konstantinov, A. / Buono, B. / Bast, M. / Eisele, R. / Wang, L. / Magnusson, A.

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Title:

1200 V, 3.3 m Omega SiC Bipolar Junction Transistor Power Modules

Contributors:

Domeij, M. (author) / Konstantinov, A. (author) / Buono, B. (author) / Bast, M. (author) / Eisele, R. (author) / Wang, L. (author) / Magnusson, A. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 970-973

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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