2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method: Fid-Bau Portal

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

Kojima, K. / Okumura, H. / Kuroda, S. / Arai, K. / Ohi, A. / Akinaga, H.

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2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

Kojima, K. / Okumura, H. / Kuroda, S. / Arai, K. / Ohi, A. / Akinaga, H.

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

Kojima, K. / Okumura, H. / Kuroda, S. / Arai, K. / Ohi, A. / Akinaga, H.

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Title:

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

Contributors:

Kojima, K. (author) / Okumura, H. (author) / Kuroda, S. (author) / Arai, K. (author) / Ohi, A. (author) / Akinaga, H. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 93-96

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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