A platform for research: civil engineering, architecture and urbanism
Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Hatakeyama, T. (author) / Suzuki, T. (author) / Ichinoseki, K. (author) / Matsuhata, H. (author) / Fukuda, K. (author) / Shinohe, T. (author) / Arai, K. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M.
2010-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
British Library Online Contents | 2009
|Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability
British Library Online Contents | 2013
|Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
British Library Online Contents | 2011
|Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
British Library Online Contents | 2009
|British Library Online Contents | 2012
|