Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod: Fid-Bau Portal

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Nakazawa, H. / Ogino, M. / Teranishi, H. / Takahashi, Y. / Habuka, H.

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Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Nakazawa, H. / Ogino, M. / Teranishi, H. / Takahashi, Y. / Habuka, H.

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Nakazawa, H. / Ogino, M. / Teranishi, H. / Takahashi, Y. / Habuka, H.

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Document information

Title:

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Contributors:

Nakazawa, H. (author) / Ogino, M. (author) / Teranishi, H. (author) / Takahashi, Y. (author) / Habuka, H. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 923-927

Publication date:

2013-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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Morphology of Oxide Precipitates in Czochralski Silicon Crystals

Sueoka, K. / Ikeda, N. / Yamamoto, T. et al. | British Library Online Contents | 1993

New developments in silicon Czochralski crystal growth and wafer technology

Mozer, A. P. | British Library Online Contents | 2000

Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon

Bazzali, A. / Borionetti, G. / Falster, R. et al. | British Library Online Contents | 2001