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Comparison of residual stress in deep boron diffused silicon (100), (110) and (111) wafers
Comparison of residual stress in deep boron diffused silicon (100), (110) and (111) wafers
Comparison of residual stress in deep boron diffused silicon (100), (110) and (111) wafers
Dutta, S. (author) / Saxena, G. (author) / Jindal, K. (author) / Pal, R. (author) / Gupta, V. (author) / Chatterjee, R. (author)
MATERIALS LETTERS ; 100 ; 44-46
2013-01-01
3 pages
Article (Journal)
English
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