Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors: Fid-Bau Portal

Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors

Han, D. S. / Kang, Y. J. / Park, J. H. / Jeon, H. T. / Park, J. W.

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Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors

Han, D. S. / Kang, Y. J. / Park, J. H. / Jeon, H. T. / Park, J. W.

Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors

Han, D. S. / Kang, Y. J. / Park, J. H. / Jeon, H. T. / Park, J. W.

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Title:

Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors

Contributors:

Han, D. S. (author) / Kang, Y. J. (author) / Park, J. H. (author) / Jeon, H. T. (author) / Park, J. W. (author) / Boo, J.-H. / Greenblatt, M. / Nam, T.-h. / Song, C. S. / Xue, D.

Published in:

Proceedings of the IFFM2013 - Vol. 1: Fundamentals of the functional materials and Vol. 2: Applications of the functional materials ; 174-177

MATERIALS RESEARCH BULLETIN ; 58

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0025-5408

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11 / 620

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