Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

    New search for: Chan, T. K.
    New search for: Koh, S. Y.
    New search for: Fang, V.
    New search for: Markwitz, A.
    New search for: Osipowicz, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

    New search for: Chan, T. K.
    New search for: Koh, S. Y.
    New search for: Fang, V.
    New search for: Markwitz, A.
    New search for: Osipowicz, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

    New search for: Chan, T. K.
    New search for: Koh, S. Y.
    New search for: Fang, V.
    New search for: Markwitz, A.
    New search for: Osipowicz, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

    Contributors:

    Chan, T. K. (author) / Koh, S. Y. (author) / Fang, V. (author) / Markwitz, A. (author) / Osipowicz, T. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 314 ; 322-330

    Publication date:

    2014-01-01

    Size:

    9 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

    Chan, T.K. / Koh, S.Y. / Fang, V. et al. | British Library Online Contents | 2014

    Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

    Florakis, A. / Misra, N. / Grigoropoulos, C. et al. | British Library Online Contents | 2008

    Clustering of ultra-low-energy implanted boron in silicon during activation annealing

    Schroer, E. / Privitera, V. / Priolo, F. et al. | British Library Online Contents | 2000

    Defect annealing in ion implanted silicon carbide

    Calcagno, L. / Grimaldi, M. G. / Musumeci, P. | British Library Online Contents | 1997

    Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations

    Merabet, A. | British Library Online Contents | 2005

    Back to top