Clustering of ultra-low-energy implanted boron in silicon during activation annealing: Fid-Bau Portal

Clustering of ultra-low-energy implanted boron in silicon during activation annealing

Schroer, E. / Privitera, V. / Priolo, F. / Napolitani, E. / Carnera, A. / Moffatt, S.

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Clustering of ultra-low-energy implanted boron in silicon during activation annealing

Schroer, E. / Privitera, V. / Priolo, F. / Napolitani, E. / Carnera, A. / Moffatt, S.

Clustering of ultra-low-energy implanted boron in silicon during activation annealing

Schroer, E. / Privitera, V. / Priolo, F. / Napolitani, E. / Carnera, A. / Moffatt, S.

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Check availability in my library

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Document information

Title:

Clustering of ultra-low-energy implanted boron in silicon during activation annealing

Contributors:

Schroer, E. (author) / Privitera, V. (author) / Priolo, F. (author) / Napolitani, E. (author) / Carnera, A. (author) / Moffatt, S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 219 - 223

Publication date:

2000-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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