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Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations
Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations
Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations
Merabet, A. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 419-423
2005-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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