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    Experimental Investigation of Microstructure and Piezoresistive Properties of Phosphorus-Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by PECVD

    New search for: Pan, H.B.
    New search for: Ding, J.N.
    New search for: Cheng, G.G.
    New search for: Cao, B.G.

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    Experimental Investigation of Microstructure and Piezoresistive Properties of Phosphorus-Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by PECVD

    New search for: Pan, H.B.
    New search for: Ding, J.N.
    New search for: Cheng, G.G.
    New search for: Cao, B.G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Experimental Investigation of Microstructure and Piezoresistive Properties of Phosphorus-Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by PECVD

    New search for: Pan, H.B.
    New search for: Ding, J.N.
    New search for: Cheng, G.G.
    New search for: Cao, B.G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Experimental Investigation of Microstructure and Piezoresistive Properties of Phosphorus-Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by PECVD

    Contributors:

    Pan, H.B. (author) / Ding, J.N. (author) / Cheng, G.G. (author) / Cao, B.G. (author)

    Published in:

    KEY ENGINEERING MATERIALS ; 609/610 ; 208-217

    Publication date:

    2014-01-01

    Size:

    10 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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