Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    New search for: Zhang, J.
    New search for: Zhang, Q.
    New search for: Yang, H.
    New search for: Wu, H.
    New search for: Zhou, J.
    New search for: Hu, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    New search for: Zhang, J.
    New search for: Zhang, Q.
    New search for: Yang, H.
    New search for: Wu, H.
    New search for: Zhou, J.
    New search for: Hu, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    New search for: Zhang, J.
    New search for: Zhang, Q.
    New search for: Yang, H.
    New search for: Wu, H.
    New search for: Zhou, J.
    New search for: Hu, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    Contributors:

    Zhang, J. (author) / Zhang, Q. (author) / Yang, H. (author) / Wu, H. (author) / Zhou, J. (author) / Hu, L. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 315 ; 110-115

    Publication date:

    2014-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    Zhang, Jian / Zhang, Qilong / Yang, Hui et al. | British Library Online Contents | 2014

    Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

    Zhang, J. / Yang, H. / Zhang, Q. l. et al. | British Library Online Contents | 2013

    Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition

    Cao, X. / Li, X. / Yu, W. et al. | British Library Online Contents | 2009

    Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition

    Shi, Fengfeng / Han, Jun / Xing, Yanhui et al. | British Library Online Contents | 2019

    XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition

    Motamedi, P. / Cadien, K. | British Library Online Contents | 2014

    Back to top