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    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    New search for: Zhang, Jian
    New search for: Zhang, Qilong
    New search for: Yang, Hui
    New search for: Wu, Huayu
    New search for: Zhou, Juehui
    New search for: Hu, Liang

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    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    New search for: Zhang, Jian
    New search for: Zhang, Qilong
    New search for: Yang, Hui
    New search for: Wu, Huayu
    New search for: Zhou, Juehui
    New search for: Hu, Liang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    New search for: Zhang, Jian
    New search for: Zhang, Qilong
    New search for: Yang, Hui
    New search for: Wu, Huayu
    New search for: Zhou, Juehui
    New search for: Hu, Liang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    Contributors:

    Zhang, Jian (author) / Zhang, Qilong (author) / Yang, Hui (author) / Wu, Huayu (author) / Zhou, Juehui (author) / Hu, Liang (author)

    Published in:

    Applied surface science ; 315 ; 110-115

    Publication date:

    2014-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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