Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation: Fid-Bau Portal

Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

Chen, Z. / Xu, Y. / Garfunkel, E. / Feldman, L. C. / Buyuklimanli, T. / Ou, W. / Serfass, J. / Wan, A. / Dhar, S.

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Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

Chen, Z. / Xu, Y. / Garfunkel, E. / Feldman, L. C. / Buyuklimanli, T. / Ou, W. / Serfass, J. / Wan, A. / Dhar, S.

Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

Chen, Z. / Xu, Y. / Garfunkel, E. / Feldman, L. C. / Buyuklimanli, T. / Ou, W. / Serfass, J. / Wan, A. / Dhar, S.

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Document information

Title:

Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

Contributors:

Chen, Z. (author) / Xu, Y. (author) / Garfunkel, E. (author) / Feldman, L. C. (author) / Buyuklimanli, T. (author) / Ou, W. (author) / Serfass, J. (author) / Wan, A. (author) / Dhar, S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 317 ; 593-597

Publication date:

2014-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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