Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface: Fid-Bau Portal

Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

Miyazaki, S. / Tamura, T. / Ogasawara, M. / Itokawa, H. / Murakami, H. / Hirose, M.

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Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

Miyazaki, S. / Tamura, T. / Ogasawara, M. / Itokawa, H. / Murakami, H. / Hirose, M.

Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

Miyazaki, S. / Tamura, T. / Ogasawara, M. / Itokawa, H. / Murakami, H. / Hirose, M.

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Title:

Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

Contributors:

Miyazaki, S. (author) / Tamura, T. (author) / Ogasawara, M. (author) / Itokawa, H. (author) / Murakami, H. (author) / Hirose, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 159-160 ; 75-82

Publication date:

2000-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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