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    Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

    New search for: Park, H. W.
    New search for: Choi, M. J.
    New search for: Jo, Y.
    New search for: Chung, K. B.

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    Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

    New search for: Park, H. W.
    New search for: Choi, M. J.
    New search for: Jo, Y.
    New search for: Chung, K. B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

    New search for: Park, H. W.
    New search for: Choi, M. J.
    New search for: Jo, Y.
    New search for: Chung, K. B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

    Contributors:

    Park, H. W. (author) / Choi, M. J. (author) / Jo, Y. (author) / Chung, K. B. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 321 ; 520-524

    Publication date:

    2014-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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