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Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing
Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing
Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing
Park, H. W. (Autor:in) / Choi, M. J. (Autor:in) / Jo, Y. (Autor:in) / Chung, K. B. (Autor:in)
APPLIED SURFACE SCIENCE ; 321 ; 520-524
01.01.2014
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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