Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma: Fid-Bau Portal

Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

Goerke, S. / Ziegler, M. / Ihring, A. / Dellith, J. / Undisz, A. / Diegel, M. / Anders, S. / Huebner, U. / Rettenmayr, M. / Meyer, H. G.

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Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

Goerke, S. / Ziegler, M. / Ihring, A. / Dellith, J. / Undisz, A. / Diegel, M. / Anders, S. / Huebner, U. / Rettenmayr, M. / Meyer, H. G.

Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

Goerke, S. / Ziegler, M. / Ihring, A. / Dellith, J. / Undisz, A. / Diegel, M. / Anders, S. / Huebner, U. / Rettenmayr, M. / Meyer, H. G.

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Document information

Title:

Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

Contributors:

Goerke, S. (author) / Ziegler, M. (author) / Ihring, A. (author) / Dellith, J. (author) / Undisz, A. (author) / Diegel, M. (author) / Anders, S. (author) / Huebner, U. (author) / Rettenmayr, M. (author) / Meyer, H. G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 338 ; 35-41

Publication date:

2015-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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