Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure: Fid-Bau Portal

Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure

Ye, L. / Zhang, M. / Xue, Z. / Yang, J. / Wang, X. / Di, Z.

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Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure

Ye, L. / Zhang, M. / Xue, Z. / Yang, J. / Wang, X. / Di, Z.

Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure

Ye, L. / Zhang, M. / Xue, Z. / Yang, J. / Wang, X. / Di, Z.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure

Contributors:

Ye, L. (author) / Zhang, M. (author) / Xue, Z. (author) / Yang, J. (author) / Wang, X. (author) / Di, Z. (author)

Published in:

APPLIED SURFACE SCIENCE ; 356 ; 1052-1057

Publication date:

2015-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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