In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics: Fid-Bau Portal

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Tsai, M. C. / Lee, M. H. / Kuo, C. L. / Lin, H. C. / Chen, M. J.

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In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Tsai, M. C. / Lee, M. H. / Kuo, C. L. / Lin, H. C. / Chen, M. J.

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Tsai, M. C. / Lee, M. H. / Kuo, C. L. / Lin, H. C. / Chen, M. J.

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Document information

Title:

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Contributors:

Tsai, M. C. (author) / Lee, M. H. (author) / Kuo, C. L. (author) / Lin, H. C. (author) / Chen, M. J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 387 ; 274-279

Publication date:

2016-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

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