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Device characteristics of amorphous indium-gallium-zinc-oxide channel capped with silicon oxide passivation layers
Device characteristics of amorphous indium-gallium-zinc-oxide channel capped with silicon oxide passivation layers
Device characteristics of amorphous indium-gallium-zinc-oxide channel capped with silicon oxide passivation layers
Jang, Geon (author) / Lee, Su Jeong (author) / Kim, Yun Cheol (author) / Lee, Sang Hoon (author) / Biswas, Pranab (author) / Lee, Woong (author) / Myoung, Jae-Min (author)
Materials science in semiconductor processing ; 49 ; 34-39
2016-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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