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    Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

    New search for: Turut, A.
    New search for: Karabulut, A.
    New search for: Ejderha, K.
    New search for: Bıyıklı, N.

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    Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

    New search for: Turut, A.
    New search for: Karabulut, A.
    New search for: Ejderha, K.
    New search for: Bıyıklı, N.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

    New search for: Turut, A.
    New search for: Karabulut, A.
    New search for: Ejderha, K.
    New search for: Bıyıklı, N.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

    Contributors:

    Turut, A. (author) / Karabulut, A. (author) / Ejderha, K. (author) / Bıyıklı, N. (author)

    Published in:

    Materials science in semiconductor processing ; 39 ; 400-407

    Publication date:

    2015-01-01

    Size:

    8 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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