A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Improvement of the short channel effect in PMOSFETs using cold implantation
Improvement of the short channel effect in PMOSFETs using cold implantation
Improvement of the short channel effect in PMOSFETs using cold implantation
Lee, Suk Hun (author) / Park, Se Geun (author) / Jeong, Seong Hoon (author) / Jung, Hyuck-Chai (author) / Kim, Il Gweon (author) / Kang, Dong-Ho (author) / Nam, Hyo-Jik (author) / Kim, Dae Jung (author) / Lee, Kyu Pil (author) / Choi, Joo Sun (author)
Materials research bulletin ; 82 ; 31-34
2016-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Short channel effect improved strained-Si:C-source/drain PMOSFETs
| British Library Online Contents | 2008
Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs
| British Library Online Contents | 2004
Challenges and opportunities in advanced Ge pMOSFETs
| British Library Online Contents | 2012
Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
| British Library Online Contents | 2009
pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions
| British Library Online Contents | 2005