Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation: Fid-Bau Portal

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Moscatelli, F. / Nipoti, R. / Solmi, S. / Cristiani, S. / Sanmartin, M. / Poggi, A.

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Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Moscatelli, F. / Nipoti, R. / Solmi, S. / Cristiani, S. / Sanmartin, M. / Poggi, A.

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Moscatelli, F. / Nipoti, R. / Solmi, S. / Cristiani, S. / Sanmartin, M. / Poggi, A.

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Title:

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Contributors:

Moscatelli, F. (author) / Nipoti, R. (author) / Solmi, S. (author) / Cristiani, S. (author) / Sanmartin, M. (author) / Poggi, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 699-702

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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