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Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor
Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor
Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor
Gao, J. (author) / He, G. (author) / Xiao, D.Q. (author) / Jiang, S.S. (author) / Lv, J.G. (author) / Cheng, C. (author) / Sun, Z.Q. (author)
Materials research bulletin ; 91 ; 166-172
2017-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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