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    Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

    New search for: Gao, Juan
    New search for: He, Gang
    New search for: Xiao, Dongqi
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    New search for: Jiang, Shanshan
    New search for: Li, Wendong
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    New search for: Zhu, Li

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    Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

    New search for: Gao, Juan
    New search for: He, Gang
    New search for: Xiao, Dongqi
    New search for: Jin, Peng
    New search for: Jiang, Shanshan
    New search for: Li, Wendong
    New search for: Liang, Shuang
    New search for: Zhu, Li

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

    New search for: Gao, Juan
    New search for: He, Gang
    New search for: Xiao, Dongqi
    New search for: Jin, Peng
    New search for: Jiang, Shanshan
    New search for: Li, Wendong
    New search for: Liang, Shuang
    New search for: Zhu, Li

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

    Contributors:

    Gao, Juan (author) / He, Gang (author) / Xiao, Dongqi (author) / Jin, Peng (author) / Jiang, Shanshan (author) / Li, Wendong (author) / Liang, Shuang (author) / Zhu, Li (author)

    Published in:

    Journal of materials science & technology ; 33 ; 901-906

    Publication date:

    2017-01-01

    Size:

    6 pages

    ISSN:

    1005-0302

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1105

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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