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    Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    New search for: Yuan, Lei
    New search for: Zhang, Hongpeng
    New search for: Jia, Renxu
    New search for: Guo, Lixin
    New search for: Zhang, Yimen
    New search for: Zhang, Yuming

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    Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    New search for: Yuan, Lei
    New search for: Zhang, Hongpeng
    New search for: Jia, Renxu
    New search for: Guo, Lixin
    New search for: Zhang, Yimen
    New search for: Zhang, Yuming

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    New search for: Yuan, Lei
    New search for: Zhang, Hongpeng
    New search for: Jia, Renxu
    New search for: Guo, Lixin
    New search for: Zhang, Yimen
    New search for: Zhang, Yuming

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    Contributors:

    Yuan, Lei (author) / Zhang, Hongpeng (author) / Jia, Renxu (author) / Guo, Lixin (author) / Zhang, Yimen (author) / Zhang, Yuming (author)

    Published in:

    Applied surface science ; 433 ; 530-534

    Publication date:

    2018-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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