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    Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

    New search for: Park, Tae Joo
    New search for: Byun, Youngchol
    New search for: Wallace, Robert M.
    New search for: Kim, Jiyoung

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    Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

    New search for: Park, Tae Joo
    New search for: Byun, Youngchol
    New search for: Wallace, Robert M.
    New search for: Kim, Jiyoung

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

    New search for: Park, Tae Joo
    New search for: Byun, Youngchol
    New search for: Wallace, Robert M.
    New search for: Kim, Jiyoung

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

    Contributors:

    Park, Tae Joo (author) / Byun, Youngchol (author) / Wallace, Robert M. (author) / Kim, Jiyoung (author)

    Published in:

    Applied surface science ; 371 ; 360-364

    Publication date:

    2016-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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