Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation: Fid-Bau Portal

Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

Park, Tae Joo / Byun, Youngchol / Wallace, Robert M. / Kim, Jiyoung

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Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

Park, Tae Joo / Byun, Youngchol / Wallace, Robert M. / Kim, Jiyoung

Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

Park, Tae Joo / Byun, Youngchol / Wallace, Robert M. / Kim, Jiyoung

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

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Dokumentinformationen

Titel:

Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

Beteiligte:

Park, Tae Joo (Autor:in) / Byun, Youngchol (Autor:in) / Wallace, Robert M. (Autor:in) / Kim, Jiyoung (Autor:in)

Erschienen in:

Applied surface science ; 371 ; 360-364

Erscheinungsdatum:

01.01.2016

Format / Umfang:

5 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.44

Park, T. J. / Byun, Y. / Wallace, R. M. et al. | British Library Online Contents | 2016

Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

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Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

Kim, S. H. / Seok, T. J. / Jin, H. S. et al. | British Library Online Contents | 2016

Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface

Patil, V.S. / Agrawal, K.S. / Khairnar, A.G. et al. | British Library Online Contents | 2017

Trends of structural and electrical properties in atomic layer deposited HfO2 films

Scarel, G. / Spiga, S. / Wiemer, C. et al. | British Library Online Contents | 2004

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