Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation: Fid-Bau Portal

Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

Kim, S. H. / Seok, T. J. / Jin, H. S. / Kim, W. B. / Park, T. J.

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Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

Kim, S. H. / Seok, T. J. / Jin, H. S. / Kim, W. B. / Park, T. J.

Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

Kim, S. H. / Seok, T. J. / Jin, H. S. / Kim, W. B. / Park, T. J.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

Contributors:

Kim, S. H. (author) / Seok, T. J. (author) / Jin, H. S. (author) / Kim, W. B. (author) / Park, T. J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 365 ; 376-379

Publication date:

2016-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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